STUDIES FROM YEREVAN STATE UNIVERSITY HAVE PROVIDED NEW DATA ON QUANTUM DOTS

Nanotechnology Business Journal
May 17, 2010

According to a study from Yerevan, Armenia, "The effect of
interdiffusion of Al and Ga atoms on the binding energy of the
hydrogen-like shallow donor impurity in spherically symmetric
GaAs/Ga1-xAlxAs quantum dot is investigated."

"The dependence of the binding energy on the diffusion length, as
well as on dot radius and impurity position are obtained," wrote V.L.A.

Aghchegala and colleagues, Yerevan State University.

The researchers concluded: "It is shown that the dependence of the
binding energy on the diffusion length has non-monotonic behavior in
both the cases of on- and off-center impurity and can be significantly
different for varied values of the dot radius and the distance of
impurity from the dot center."

Aghchegala and colleagues published the results of their research
in Physica E – Low – Dimensional Systems & Nanostructures (Effect
of interdiffusion on impurity states in quantum dots of spherical
symmetry. Physica E – Low – Dimensional Systems & Nanostructures,
2010;42(5):1567-1570).

For additional information, contact V.L.A. Aghchegala, Yerevan State
University, Dept. of Solid State Physics, Al Manoogian 1, Yerevan
375025, Armenia.

The publisher of the journal Physica E – Low – Dimensional Systems &
Nanostructures can be contacted at: Elsevier Science BV, PO Box 211,
1000 AE Amsterdam, Netherlands.