Nanotechnology Weekly
January 26, 2009
THIN SOLID FILMS;
Studies from Yerevan State University provide new data on thin solid films
According to recent research from Yerevan, Armenia, "Porous silicon
layer was formed by electrochemical anodization on n- and p-type
silicon surface. Thereafter n-type TiC1.98 and ZnO < AI > thin films
were deposited onto porous silicon surface by electron-beam
evaporation and magnetron sputtering, respectively."
"A Pt catalytic layer and Au electrical contacts for further
electrical measurements were deposited by ion-beam sputtering. Changes
in sensitivity versus time of obtained structures were examined for
different concentrations of hydrogen gas and propane-butane
mixture. High sensitivity and selectivity to hydrogen gas was
detected," wrote V.E. Galstyan and colleagues, Yerevan State
University.
The researchers concluded: "All measurements were carried out at 40
degrees C."
Galstyan and colleagues published their study in Thin Solid Films
(Investigations of hydrogen sensors made of porous silicon. Thin Solid
Films, 2008;517(1):239-241).
For additional information, contact V.M. Aroutiounian, Yerevan State
University, Dept. of Physics Semicond & Microelect, Yerevan 0025,
Armenia.
Publisher contact information for the journal Thin Solid Films is:
Elsevier Science SA, PO Box 564, 1001 Lausanne, Switzerland.