STUDIES FROM A.O. ABOYAN ET AL PROVIDE NEW DATA ON CRYSTAL RESEARCH
Technology Business Journal
March 30, 2010
"Structural distortions in nonpolar, particularly, in semiconducting
silicon crystals, caused by constant electric field have been disclosed
by means of X-ray interferometry," investigators in Yerevan, Armenia
report.
"It was shown that in the field both the direction of moire fringes
and the frequency (period) are changed, and the moire patterns
disappear at values of potential difference in excess of 1.5 kV,"
wrote A.O. Aboyan and colleagues.
The researchers concluded: "The moire pattern obtained under the action
of electrostatic field is independent of the direction (polarity)
of the field, the pictures for both the polarities being completely
identical."
Aboyan and colleagues published their study in Crystal Research and
Technology (Structural distortions of semiconducting silicon crystals
caused by constant electric field. Crystal Research and Technology,
2010;45(2):140-144).
For additional information, contact A.O. Aboyan, State Engn University
Armenia, Dept. of Phys, Teryan Str 105, Yerevan, Armenia.
The publisher of the journal Crystal Research and Technology can
be contacted at: Wiley-V C H Verlag GmbH, PO Box 10 11 61, D-69451
Weinheim, Germany.